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US 2014/0110717 A1Published application
Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsXianyu WENXU, Yeon-hee KIM, Chang-youl MOON, Yong-young PARK
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Abstract
A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
Claims19
A structure comprising:
- a plurality of silicon rods on a silicon substrate;
- a silicon layer on the plurality of silicon rods;
- and
- a gallium nitride (GaN) substrate on the silicon layer.
1 more element
A method of manufacturing a GaN substrate, the method comprising:
- forming a plurality of silicon rods on an upper surface of a silicon substrate by etching the silicon substrate;
- forming an amorphous silicon layer on the plurality of silicon rods;
- changing the amorphous silicon layer to a crystalline silicon layer;
- and
- growing a GaN substrate on the crystalline silicon layer.
2 more elements
Dependencies are inferred from the claim text.