High mobility compound semiconductor material using multiple anions
AssigneeApplied Materials, Inc.
InventorYan YE
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Abstract
The present invention generally relates to an amorphous semiconductor material and TFTs containing the material. The semiconductor material contains a single cation, such as zinc, and multiple anions. For the multiple anions, only one of the anions can be oxygen or nitrogen. The anions compete with each other to twist the resulting structure. For example, if one of the anions bonded with the cation would result in a cubic structure, and another of the anions bonded with the cation would result in a hexagonal structure, the competing anions would twist the resulting structure so that the structure remains amorphous rather than crystalline. Further, because a single cation is utilized, there is no grain boundary and thus, the material has a high mobility.
Claims21
An amorphous semiconductor compound, comprising a single cation and multiple anions, wherein at most one anion comprises nitrogen or oxygen.
A thin film transistor, comprising:
- a gate electrode;
- a gate dielectric layer disposed over the gate electrode;
- an amorphous semiconductor layer disposed over the gate dielectric layer, the amorphous semiconductor layer comprising a single cation and multiple anions, wherein at most one cation comprises nitrogen or oxygen;
- and
- source and drain electrodes disposed over the amorphous semiconductor layer.
A method of making a thin film transistor, comprising depositing an amorphous semiconductor layer over a gate dielectric layer, the amorphous semiconductor layer comprising a single cation and multiple anions, wherein at most one cation comprises nitrogen or oxygen.
Dependencies are inferred from the claim text.