Oxide Thin Film Transistor And Method For Manufacturing The Same, Array Substrate, And Display Apparatus
AssigneeBoe Technology Group Co., Ltd.
InventorsJun Cheng, Woobong Lee
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Abstract
Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).
Claims20
An oxide thin film transistor (oxide-TFT) comprising a substrate, and a gate electrode and a gate insulating layer sequentially disposed on the substrate,
- wherein an active layer is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer and a second blocking layer.
A method for fabricating an oxide thin film transistor (oxide-TFT) comprising:
- forming a gate electrode layer on a substrate, and forming a pattern comprising a gate electrode and a gate line by a patterning process;
- forming a gate insulating layer and an active layer;
- forming a first blocking layer and a second blocking layer;
- and
- forming a source/drain metal layer, and forming a pattern comprising source/drain electrodes and a channel region of the TFT by a patterning process.
Dependencies are inferred from the claim text.