Chamber pasting method in a pvd chamber for reactive re-sputtering dielectric material
AssigneeApplied Materials, Inc.
InventorsYong CAO, Thanh X. NGUYEN, Muhammad M. RASHEED, Xianmin TANG
Life of this patent
Estimating the term…
Abstract
According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.
Claims20
A method for forming a dielectric material, comprising:
- disposing a shutter disk over a substrate support of a physical vapor deposition chamber having a target for depositing a dielectric material;
- adjusting at least one of spacing between the substrate support and the target and a chamber pressure;
- and
- pasting a conductive layer over inner surfaces of the physical vapor deposition chamber by sputtering the target or the shutter disk.
A method for forming a dielectric material, comprising:
- flowing a reactive gas and an inert gas into a physical vapor deposition chamber having a target comprising a conductive material;
- generating a plasma of the reactive gas and the inert gas to sputter the target and depositing a dielectric film on the substrate disposed on a substrate support in the physical vapor deposition chamber by reactive sputtering;
- ceasing the flow of the reactive gas;
- adjusting at least one of a chamber pressure and a spacing between the substrate support and the target;
- and
- generating a plasma of the inert gas to sputter the target and to paste a conductive film on inner surfaces of the physical vapor deposition chamber.
A method for forming a dielectric material, comprising:
- flowing an inert gas towards a physical vapor deposition chamber having a target comprising a dielectric material;
- generating a plasma of the inert gas to sputter the target and depositing a dielectric film on the substrate disposed on a substrate support in the physical vapor deposition chamber;
- disposing a first shutter disk over the target;
- disposing a second shutter disk over the substrate support;
- adjusting at least one of a chamber pressure and a spacing between the substrate support and the target;
- and
- generating a plasma of the inert gas to sputter the first shutter disk or the second shutter disk and to paste a conductive film on inner surfaces of the physical vapor deposition chamber.
Dependencies are inferred from the claim text.