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US 2014/0109824 A1Published application
Method of growing silicon single crystal
OwnerJung Ha Hwang, Sang Hee Kiminventors
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Abstract
Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less.
Claims14
A method of growing a silicon single crystal, the method comprising:
- preparing a silicon melt;
- adding a dopant having a lower melting point than the silicon melt to the silicon melt;
- and
- growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body,
- wherein a length of the neck is adjusted to 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less in the growing of the silicon single crystal.
2 more elements
Dependencies are inferred from the claim text.