Simulator, method, and program for predicting processing shape by plasma process

A predicting simulation method for predicting a processing shape by a plasma process, comprising:

• a conditions-setting step for setting conditions relevant to an object to be processed, process conditions including a cycle number provided that an etching process and a deposition process are taken as one cycle, and conditions relevant to simulation;
• an etching process surface transition amount calculating step for calculating a surface transition amount by plasma etching based on etching process conditions;
• and
• a deposition process surface transition amount calculating step for calculating a surface transition amount by plasma deposition based on deposition process conditions,
• wherein the etching process surface transition amount calculating step and the deposition process surface transition amount calculating step are repeated for the cycle number set by the conditions-setting step to calculate a processing shape.

A non-transitory computer readable medium storing a predicting simulation program for predicting a processing shape by a plasma process, comprising:

• a conditions-setting step for setting conditions relevant to an object to be processed, process conditions including a cycle number provided that an etching process and a deposition process are taken as one cycle, and conditions relevant to simulation;
• an etching process surface transition amount calculating step for calculating a surface transition amount by plasma etching based on etching process conditions;
• and
• a deposition process surface transition amount calculating step for calculating a surface transition amount by plasma deposition based on deposition process conditions,
• wherein the etching process surface transition amount calculating step and the deposition process surface transition amount calculating step are repeated for the cycle number set by the conditions-setting step to calculate a processing shape.

A non-transitory computer readable medium storing a predicting simulation program for predicting a processing shape by a plasma process of alternately performing a deposition process and etching process, comprising:

• a simulation step for predicting a required time, and
• a search step for searching for an optimum condition,
• wherein the deposition process is a process in which an anti-etching film is accumulated on a side wall and bottom of a hole,
• the etching process is divided into a first etching process to remove the anti-etching film accumulated on the bottom and a second etching process to dig into the hole, and
• wherein the required time is time for removing the anti-etching film accumulated on the bottom, and
• the optimum condition is condition of either or both etching time and bias power in the second etching process when the required time predicted is set in the first etching process.