Apparatus and Method for Improved Control of Heating and Cooling of Substrates
AssigneeApplied Materials, Inc.
InventorsBlake R. Koelmel, Norman L. Tam, Joseph M. Ranish
Life of this patent
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Abstract
Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.
Claims20
A method for processing a substrate in a rapid thermal processing chamber, the substrate absorptive of radiation in a second range of wavelengths, the method comprising:
- rapidly heating the substrate with a heating source producing radiation in a first range of wavelengths within a predetermined temperature range, the second range of wavelengths within the first range of wavelengths;
- and
- filtering radiation from the heating source so that at least a portion of the radiation within the second range of wavelengths is not absorbed by the substrate, the filter comprising a coating to block light in the second range of wavelengths so that the light in the second range of wavelengths is not transmitted to the substrate.
A method for processing a substrate in a rapid thermal processing chamber, the substrate absorptive of radiation in a second range of wavelengths, the method comprising:
- rapidly heating the substrate with a heating source producing radiation in a first range of wavelengths within a predetermined temperature range, the second range of wavelengths within the first range of wavelengths;
- and
- filtering radiation from the heating source so that at least a portion of the radiation within the second range of wavelengths is not absorbed by the substrate, the filter comprising a coating to block light in the second range of wavelengths so that the light in the second range of wavelengths is not transmitted to the substrate and the filter is reflective to prevent at least a portion of the radiation within the second range of wavelengths from being transmitted to the substrate when the heating source is turned off after heating the substrate to a temperature of less than about 600° C. and the substrate cooling occurs at a faster rate than when the radiation within the second range of wavelengths is not prevented from being absorbed by the substrate.
A method for processing a silicon substrate in a rapid thermal processing chamber, the silicon substrate absorptive of radiation in a second range of wavelengths, the method comprising:
- rapidly heating the silicon substrate with a heating source producing radiation in a first range of wavelengths within a predetermined temperature range, the second range of wavelengths within the first range of wavelengths and having a lower limit that exceeds about 900 nm and an upper limit of about 1300 nm;
- and
- filtering radiation from the heating source so that at least a portion of the radiation within the second range of wavelengths is not absorbed by the substrate, the filter comprising a coating to block light in the second range of wavelengths so that the light in the second range of wavelengths is not transmitted to the substrate.
Dependencies are inferred from the claim text.