Finfet structure with multiple workfunctions and method for fabricating the same

A method for fabricating a multiple-workfunction FinFET structure, comprising:

• depositing a first workfunction material in a layer in a plurality of trenches between of the FinFET structure;
• depositing a photoactive etching material over the first workfunction material layer;
• differentially etching the photoactive etching material so as to completely remove the photoactive etching material from all but a first trench of the plurality of trenches, wherein at least a portion of the first workfunction material remains in the first trench;
• depositing a second workfunction material in a layer in the plurality of trenches;
• depositing a photoactive etching material over the second workfunction material layer;
• differentially etching the photoactive etching material so as to completely remove the photoactive etching material from all but a second trench of the plurality of trenches, wherein at least a portion of the second workfunction material remains in the second trench;
• and
• depositing a third workfunction material in a layer in the plurality of trenches.

A method for fabricating a multiple-workfunction FinFET structure, comprising:

• depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure;
• etching the first workfunction material layer so as to completely remove the first workfunction material layer from all but a first trench of the plurality of trenches;
• depositing a second workfunction material in a layer in the plurality of trenches;
• etching the second workfunction material layer so as to completely remove the second workfunction material layer from all but a second trench of the plurality of trenches;
• and
• depositing a third workfunction material in a layer in the plurality of trenches.