US 2014/0004626 A1 · TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING

Abstract

Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

Claims20

Dependent claims

A method for chemical mechanical polishing (CMP) of a conductive material disposed on one or more substrates, the method comprising:

polishing the one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of the conductive material;
monitoring a temperature of the polishing surface during the polishing process;
and
exposing the polishing surface to a rate quench process in response to the monitored temperature so as to maintain the temperature of the polishing surface at a target value during the polishing process.

1 more element

Dependencies are inferred from the claim text.

Temperature control of chemical mechanical polishing

Life of this patent

Temperature control of chemical mechanical polishing

Life of this patent

Abstract

Claims20