Deposition Of Films Containing Alkaline Earth Metals
AssigneeApplied Materials, Inc.
InventorDavid Thompson
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Abstract
Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.
Claims20
A method of depositing a metal oxide film on a substrate comprising:
- (a) exposing a substrate surface to flows of a metal precursor and a halide precursor to provide a metal halide film on the substrate surface, wherein the metal comprises a group 2 metal;
- then
- (b) exposing a substrate surface containing the metal halide film to an oxidant;
- and
- (c) subsequently exposing the substrate surface to heat or a plasma to provide a metal oxide film on the substrate.
A method of depositing a strontium oxide film on a substrate, the method comprising:
- (a) exposing a substrate surface to alternating pulses of a strontium precursor and a halide precursor to provide a strontium halide film on the substrate surface;
- then
- (b) exposing the substrate surface containing a strontium halide film to an oxidant;
- and
- (c) exposing the substrate surface to heat or a plasma to provide a strontium oxide film on the substrate surface.
A method of depositing a strontium oxide metal film having no strontium carbonate incorporation on a substrate, the method comprising:
- (a) disposing a substrate within a processing chamber;
- (b) performing a deposition process comprising:
- (i) flowing a strontium precursor gas and Cl2 gas to at least a portion of the substrate within the chamber under conditions which form a partial monolayer on the substrate, the partial monolayer comprising strontium terminated with chlorine,
- (ii) flowing a purge gas,
- (iii) flowing water vapor to the substrate within the chamber under conditions which form a partial monolayer on the substrate, the partial monolayer comprising SrO2 or Sr(OH)2 and
- (iv) flowing a purge gas;
- (c) exposing the substrate having the SrO2 or Sr(OH)2 containing film thereon to heat or a plasma,
- (i) flowing a purge gas;
- and
- (d) repeating (b) and (c);
- wherein the deposition process is selected from chemical vapor deposition and atomic layer deposition or combinations thereof.
Dependencies are inferred from the claim text.