Semiconductor Structure and Method

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor raw material;
• introducing a vacancy enhancing raw material into the semiconductor raw material;
• crystallizing the semiconductor raw material and the vacancy enhancing material into a semiconductor ingot, wherein the semiconductor ingot comprises a first set of vacancies and has an interstitial oxygen concentration greater than 7×1017 atoms/cm3;
• separating a semiconductor wafer from the semiconductor ingot, the semiconductor wafer comprising the first set of vacancies;
• and
• transforming the first set of vacancies into bulk micro defects using at least in part a thermal process.

A method of manufacturing a semiconductor device, the method comprising:

• placing a semiconductor raw material into a crucible;
• introducing nitrogen into the crucible;
• mixing the semiconductor raw material and the nitrogen to form a semiconductor melt;
• and
• pulling a semiconductor ingot from the semiconductor melt, the semiconductor ingot comprising the nitrogen and having an interstitial oxygen concentration greater than 7×1017 atoms/cm3.