Silicon-on-Insulator High Power Amplifiers

A power amplifier comprising:

• a plurality of amplifier cells, each of the plurality of amplifier cells comprising (i) a first transistor that is arranged in a common-source configuration and (ii) a feedback resistor configured to dynamically bias the first transistor;
• and
• a first cascode amplifier cell comprising (i) a second transistor that is arranged in a common-source configuration, (ii) a third transistor that is arranged in a common-gate configuration, and (iii) a first biasing network configured to dynamically bias the second and third transistors;
• wherein the first transistors, the second transistor, and the third transistor are electrically coupled in a series stack, an output of the power amplifier being provided across the series stack.

A power transistor comprising:

• a plurality of transistor fingers;
• a temperature sensor configured to detect a junction temperature of one of the plurality of transistor fingers;
• and
• a body terminal configured to stabilize a local threshold voltage of the one of the plurality of transistor fingers in response to the junction temperature exceeding a threshold value.