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US 2013/0297985 A1Published application
Data recovery in solid state memory devices
AssigneeMarvell World Trade Ltd.
InventorXueshi Yang
Life of this patent
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Abstract
Embodiments herein provide data recovery techniques and configurations for solid state memory devices. For example, a method includes identifying a hard error associated with a cell of a solid state memory device, providing a location of the cell having the identified hard error to a decoder to recover data originally programmed to the cell, and recovering the data originally programmed to the cell using the decoder. Other embodiments may be described and/or claimed.
Claims20
A method comprising:
- reading data programmed in a first plurality of cells of a memory device;
- decoding the data read from the first plurality of cells of the memory device, including
- in response to a failure to decode, in a first attempt, the data read from the first plurality of cells of the memory device,
- (i) reprogramming the first plurality of cells with a known data pattern, and,
- (ii) based on the known data pattern reprogrammed in the first plurality of cells, identifying a location of one or more cells of the first plurality of cells of the memory device that caused the failure, in the first attempt, to decode the data read from the first plurality of cells of the memory device;
- and
- in a second attempt to decode the data read from the first plurality of cells of the memory device, decoding the data read from the first plurality of cells of the memory device in view of the location of the one or more cells of the first plurality of cells of the memory device that caused the failure, in the first attempt, to decode the data read from the first plurality of cells of the memory device.
4 more elements
An apparatus comprising:
- a memory device;
- a computer-readable storage medium;
- and
- instructions tangibly stored in the computer-readable storage medium, the instructions being executable by a programmable processor to enable the programmable processor to
- read data programmed in a first plurality of cells of a memory device,
- decode the data read from the first plurality of cells of the memory device, including
- in response to a failure to decode, in a first attempt, the data read from the first plurality of cells of the memory device, (i) reprogramming the first plurality of cells with a known data pattern, and (ii) based on the known data pattern reprogrammed in the first plurality of cells, identifying a location of one or more cells of the first plurality of cells of the memory device that caused the failure, in the first attempt, to decode the data read from the first plurality of cells of the memory device, and in a second attempt to decode the data read from the first plurality of cells of the memory device, decode the data read from the first plurality of cells of the memory device in view of the location of the one or more cells of the first plurality of cells of the memory device that caused the failure, in the first attempt, to decode the data read from the first plurality of cells of the memory device.
4 more elements
Dependencies are inferred from the claim text.