Plasma etching method
AssigneeTokyo Electron Limited
InventorsAkitaka Shimizu, Masanobu Honda
Life of this patent
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Abstract
A plasma etching method performs a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W. The method includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support and an electrode provided so as to face the support.
Claims8
A plasma etching method for performing a plasma etching on a substrate by irradiating plasma containing charged particles and neutral particles to the substrate, the method comprising:
- controlling a distribution of reaction amounts between the substrate and the neutral particles in a surface of the substrate by adjusting a temperature distribution in the surface of the substrate supported by a support;
- and
- controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate by adjusting a gap between the substrate supported by the support and an electrode provided so as to face the support.
Dependencies are inferred from the claim text.