US 2013/0295772 A1 · METHOD OF FORMING PATTERNS

Abstract

A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Claims20

Dependent claims

A method of forming patterns comprising the steps of:

forming a photoresist film on a substrate;
exposing the photoresist film with a first dose of light to form a first area and a second area in the photoresist film;
forming a first hole and a second hole by removing the first area and the second area with a first developer;
re-exposing the photoresist film with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole;
and
forming a third hole between the first hole and the second hole by removing the third area with a second developer.

3 more elements

A method of manufacturing a semiconductor device comprising the steps of:

forming a photoresist film on a substrate;
aligning a photomask including at least two light transmitting areas over the photoresist film;
irradiating a first dose of light through the photomask to form at least two areas in the photoresist film, wherein each of the at least two areas is positioned below each of at least two light transmitting areas and each of at least two areas are smaller than each of the at least two transmitting areas;
forming at least two holes by removing the at least two areas from the photoresist with a first developer;
re-aligning the photomask over the photoresist including the at least two holes;
irradiating a second dose of the light through the photomask to form a third area in the photoresist, wherein the third area is positioned between the at least two holes in the photoresist;
and
forming a third hole by removing the third area from the photoresist film with a second developer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/719,995Filed 19 Dec 2012

Priority

KR 10-2012-00483217 May 2012

Published

7 Nov 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 50/691
Using masks for semiconductor materials: for Group IV materials or Group III-V materials
G03F 1/00
Originals for photomechanical production of textured or patterned surfaces
G03F 1/70
Preparation processes not covered by groups G03F1/20 - G03F1/50: adapting basic layout or design of masks to lithographic process requirements,…
G03F 7/0002
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g.…

Method of forming patterns

Life of this patent

Method of forming patterns

Life of this patent

Abstract

Claims20