Methods For Manufacturing Metal Gates

A method of making a metal gate, the method comprising:

• forming a high-k dielectric material on a semiconductor substrate;
• depositing a high-k dielectric cap layer over the high-k dielectric material;
• depositing a first oxide getter over the high-k dielectric cap layer;
• removing oxide and at least a portion of the first oxide getter;
• depositing an etch stop layer over the high-k dielectric cap layer;
• depositing a PMOS work function layer having a positive work function value over the etch stop layer;
• tuning the positive work function value to provide a tuned positive work function value;
• removing at least a portion of the PMOS work function layer having positive work function value;
• depositing an NMOS work function layer after removal of at least a portion of the PMOS work function layer;
• depositing a second oxide getter;
• removing oxide and at least a portion of the second oxide getter;
• depositing a NMOS work function cap layer;
• and
• depositing a fill layer
• wherein depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer comprises atomic layer deposition of TiN, TiSiN, or TiAlN.

A method of making a metal gate, the method comprising:

• forming a high-k dielectric material on a semiconductor substrate;
• depositing a high-k dielectric cap layer over the high-k dielectric material;
• depositing a first oxide getter over the high-k dielectric cap layer;
• removing oxide and at least a portion of the first oxide getter;
• depositing an etch stop layer over the high-k dielectric cap layer;
• depositing an NMOS work function layer over the etch stop layer;
• depositing an NMOS work function cap layer over the NMOS work function layer;
• removing at least a portion of the NMOS work function layer;
• depositing a second oxide getter after removal of at least a portion of the NMOS work function layer;
• removing oxide and at least a portion of the second oxide getter;
• depositing a PMOS work function layer having positive work function value after removal of at least a portion of the second oxide getter;
• tuning the positive work function value to provide a tuned positive work function value;
• and
• depositing a fill layer
• wherein depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer comprises atomic layer deposition of TiN, TiSiN, or TiAlN.