Method of manufacturing nonvolatile memory device

A method of manufacturing a nonvolatile memory device, the method comprising:

• forming a first electrode material layer above a substrate;
• depositing, on the first electrode material layer, a first oxide material layer comprising an oxygen-deficient transition metal oxide;
• depositing, on the first oxide material layer, a second oxide material layer comprising a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide material layer;
• exposing the second oxide material layer to plasma after the depositing of a second oxide material layer, the plasma being generated from gas containing at least a noble gas;
• forming a second electrode material layer on the second oxide material layer after the exposing;
• and
• applying an initialization voltage pulse between a first electrode layer and a second electrode layer to form a conductive path in a variable resistance element including the first electrode layer, a first variable resistance layer, a second variable resistance layer, and the second electrode layer which are formed through patterning of the first electrode material layer, the first oxide material layer, the second oxide material layer, and the second electrode material layer, respectively, the conductive path extending from one surface to another of the second variable resistance layer, the one surface being in contact with the second electrode layer, and the other surface being in contact with the first variable resistance layer.

A method of manufacturing a nonvolatile memory device, the method comprising:

• forming a first electrode material layer above a substrate;
• depositing, on the first electrode material layer, a second oxide material layer comprising a transition metal oxide;
• depositing, on the second oxide material layer, a first oxide material layer comprising an oxygen-deficient transition metal oxide and having a degree of oxygen deficiency higher than a degree of oxygen deficiency of the second oxide material layer;
• exposing the second oxide material layer to plasma before the depositing of a first oxide material layer after the depositing of a second oxide material layer, the plasma being generated from gas containing at least a noble gas;
• forming a second electrode material layer on the first oxide material layer after the depositing of a first oxide material layer;
• and
• applying an initialization voltage pulse between a first electrode layer and a second electrode layer to form a conductive path in a variable resistance element including the first electrode layer, a second variable resistance layer, a first variable resistance layer, and the second electrode layer which are formed through patterning of the first electrode material layer, the second oxide material layer, the first oxide material layer, and the second electrode material layer, respectively, the conductive path extending from one surface to another of the second variable resistance layer, the one surface being in contact with the first electrode layer, and the other surface being in contact with the first variable resistance layer.