Substrates And Methods Of Forming A Pattern On A Substrate

A method of forming a pattern on a substrate, the pattern comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising:

• forming a pattern-interrupting region mask elevationally over underlying substrate material, the pattern-interrupting region mask comprising a raised masking feature;
• forming a repeating pattern region mask elevationally over the pattern-interrupting region mask, the repeating pattern region mask comprising multiple raised masking features that are elevationally over the raised masking feature of the pattern-interrupting region mask and multiple raised masking features that are not elevationally over the raised masking feature of the pattern-interrupting region mask;
• and
• using the pattern-interrupting region mask and the repeating pattern region mask as a combination mask in forming the pattern into the underlying substrate material on which the combination mask is received.

A method of forming a pattern on a substrate, the pattern comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising:

• forming a repeating pattern region mask elevationally over underlying substrate material, the repeating pattern region mask comprising multiple raised masking features within the repeating pattern region and multiple raised masking features within the pattern-interrupting region;
• forming a pattern-interrupting region mask elevationally over the repeating pattern region mask, the pattern-interrupting region mask comprising a raised masking feature that is elevationally over a plurality of the multiple raised masking features of the repeating pattern region mask within the pattern-interrupting region;
• and
• using the repeating pattern mask and the pattern-interrupting region mask as a combination mask in forming the pattern into the underlying substrate material on which the combination mask is received.

A method of forming a pattern on a substrate, the pattern comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising:

• forming elevationally inner and elevationally outer masking material elevationally over underlying substrate material;
• patterning the outer masking material to mask the pattern-interrupting region and expose the repeating pattern region;
• forming a planarizing film elevationally over the patterned outer masking material and over the inner masking material;
• patterning the planarizing film into a repeating pattern of raised masking features that are elevationally over the patterned outer masking material within the pattern-interrupting region and elevationally over the inner masking material within the repeating pattern region;
• and
• using the patterned planarizing film and the patterned outer masking material as a mask in forming the pattern into the inner masking material.

A method of forming a pattern on a substrate, the pattern comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising:

• forming elevationally inner and elevationally outer masking material elevationally over underlying substrate material;
• patterning the outer masking material into a repeating pattern of raised masking features that are elevationally over the inner masking material within the pattern-interrupting region and the repeating pattern region;
• forming a planarizing film elevationally over the patterned outer masking material;
• patterning the planarizing film to mask the pattern-interrupting region and leave the repeating pattern region exposed;
• and
• using the patterned planarizing film and the patterned outer masking material as a mask in forming the pattern into the inner masking material.