Chemical vapor deposition apparatus with multiple inlets for controlling film thickness and uniformity
AssigneePinecone Material Inc.
InventorHeng Liu
Life of this patent
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Abstract
A chemical vapor deposition system includes first inlets that are located in a gas injector. Second inlets are also located in the gas injector. A first piping branch provides a gas to the first inlets and/or the second inlets. The first piping branch provides the gas at a first flow rate to the first inlets and/or at a second flow rate to the second inlets. A second piping branch provides a gas to the first inlets and/or the second inlets. The second piping branch provides the gas at at least a third flow rate to the first inlets and/or the second inlets.
Claims36
A chemical vapor deposition system, comprising:
- a gas injector;
- one or more first inlets located in the gas injector;
- one or more second inlets located in the gas injector;
- a first piping branch coupled to the first inlets and/or the second inlets, wherein the first piping branch provides at least one gas to the first inlets and/or the second inlets during use, and wherein the first piping branch provides the at least one gas at a first flow rate to the first inlets and/or at a second flow rate to the second inlets;
- and
- a second piping branch coupled to the first inlets and/or the second inlets, wherein the second piping branch provides at least one gas to the first inlets and/or the second inlets during use, and wherein the second piping branch provides the at least one gas at at least a third flow rate to the first inlets and/or the second inlets.
A method for chemical vapor deposition, comprising:
- providing a system for forming one or more layers of material on one or more substrates, the system comprising:
- a gas injector;
- one or more first inlets located in the gas injector;
- and
- one or more second inlets located in the gas injector;
- providing at least one gas, from a first piping branch, at a first flow rate to the first inlets and/or at a second flow rate to the second inlets;
- and
- providing at least one additional gas, from a second piping branch, at at least a third flow rate to the first inlets and/or the second inlets.
A chemical vapor deposition system for forming one or more layers of material on one or more substrates, comprising:
- a gas injector;
- one or more first inlets located in the gas injector;
- one or more second inlets located in the gas injector;
- and
- one or more piping branches coupled to the first inlets and the second inlets, wherein the one or more piping branches provide one or more gases, at a first flow rate to the first inlets and at a second flow rate to the second inlets;
- wherein the first flow rate through the first inlets provides a concave growth rate distribution profile and the second flow rate through the second inlets provides a convex growth rate distribution profile, and wherein the concave growth rate distribution profile and the convex growth rate distribution profile are combined to provide a substantially uniform growth rate distribution profile for the one or more layers of material on the one or more substrates.
Dependencies are inferred from the claim text.