Resistive memory device and method of fabricating the same

A method of fabricating a resistive memory device, comprising:

• forming word lines and a global word line signal line, extending substantially in a first direction, substantially on a semiconductor substrate;
• forming normal cells substantially over the word line and forming dummy cells substantially over the global word line signal line;
• forming a bit line in a second direction tilted at an angle with the first direction substantially over the unit memory cells;
• and
• disconnecting the dummy cells.

A method of fabricating a resistive memory device, comprising:

• forming a word line and a global word line signal line, extending substantially in a first direction, substantially on a semiconductor substrate;
• forming normal cells substantially over the word line and forming dummy cells substantially over the global word line signal line so that the dummy cells are electrically disconnected;
• and
• forming a bit line in a second direction tilted at an angle with the first direction substantially over the unit memory cells.