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US 2013/0280918 A1Published application
Methods and apparatus for forming silicon passivation layers on germanium or iii-v semiconductor devices
AssigneeApplied Materials, Inc.
InventorKhaled Z. AHMED
Life of this patent
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Abstract
Described are apparatus and methods for forming silicon interfacial layers on germanium or III-V materials. Such silicon layers may be deposited by atomic layer deposition at specific temperatures to avoid interdiffusion of silicon and the germanium or III-V material.
Claims20
A method of processing a substrate comprising:
- providing a substrate having a germanium or III-V semiconductor surface;
- depositing a silicon layer on the surface of the substrate via an atomic layer deposition process at a temperature to avoid interdiffusion of silicon with the germanium or III-V semiconductor surface;
- and
- depositing a dielectric layer on the silicon layer.
1 more element
A method of processing a substrate comprising:
- providing a substrate having a germanium or III-V semiconductor surface;
- atomic hydrogen cleaning the substrate to provide a cleaned substrate surface;
- depositing a silicon layer on the surface of the substrate via an atomic layer deposition process, wherein the substrate temperature is maintained below 400° C., and
- depositing a dielectric layer on the silicon layer.
1 more element
A substrate processing apparatus comprising:
- a chamber body having a chamber wall, a chamber plate and a chamber lid defining a substrate process area;
- one or more injectors to deliver reactants to the substrate process area;
- a control system comprising a silicon precursor flow controller that controls the quantity of silicon precursor delivered by the one or more injectors to the substrate process area to form a silicon layer having a predetermined thickness on a surface of the substrate.
Dependencies are inferred from the claim text.