US 2013/0280915 A1Published application

Plasma processing method

AssigneeTokyo Electron Limited

InventorsGenki Koguchi, Akio Morisaki, Yukinori Hanada

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Abstract

There is provided a plasma processing method capable of carrying out a stable plasma process by way of improving plasma stabilization and also capable of increasing lifetime of a variable capacitor in a matching unit, as compared to a conventional case. The plasma processing method comprises performing a power modulation that periodically switches the high frequency power from the high frequency power supply between a first power and a second power higher than the first power, and performing a mask control that stops a matching operation of the matching unit for an application time of the first power and for a preset time after an application of the second power is started.

Claims13

Dependent claims

A plasma processing method using a plasma processing apparatus that includes a processing chamber configured to accommodate a substrate and perform a plasma process thereon;

a processing gas supply unit configured to supply a processing gas into the processing chamber;
a pair of parallel-plate-type electrodes provided within the processing chamber;
a high frequency power supply configured to apply a high frequency power to at least one of the pair of electrodes;
and a matching unit configured to perform impedance matching of the high frequency power from the high frequency power supply, the matching unit being connected to the at least one of the electrodes, the method comprising:
performing a power modulation that periodically switches the high frequency power from the high frequency power supply between a first power and a second power higher than the first power;
and
performing a mask control that stops a matching operation of the matching unit for an application time of the first power and for a preset time after an application of the second power is started.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/920,303Filed 18 Jun 2013
Priority: JP 2009-08474831 Mar 2009
Published: 24 Oct 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 50/242
Of semiconductor materials: of Group IV materials
H01J 37/32091
Radio frequency generated discharge: the radio frequency energy being capacitively coupled to the plasma
H01J 37/32146
Controlling of the discharge by modulation of energy: amplitude modulation, includes pulsing
H01J 37/32183
Circuits specially adapted for controlling the RF discharge: matching circuits

Family

Application12/749,691Division · filed 30 Mar 2010
Application13/920,303Division
US 2010/0248489 A1Published application
US 9,455,153 B2Related patent
US 2013/0280915 A1This patent

From the US filing history. Foreign family members aren’t listed.

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