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US 2013/0280907 A1Published application
Silicidation and/or germanidation on sige or ge by cosputtering ni and ge and using an intralayer for thermal stability
AssigneeGLOBAL FOUNDRIES Inc.
InventorDerya DENIZ
Life of this patent
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Abstract
Formation of a semiconductor device with NiGe or NiSiGe and with reduced consumption of underlying Ge or SiGe is provided. Embodiments include co-sputtering nickel (Ni) and germanium (Ge), forming a first Ni/Ge layer on a Ge or silicon germanium (SiGe) active layer, depositing titanium (Ti) on the first Ni/Ge or Ni/Si/Ge layer, forming a Ti intermediate layer, co-sputtering Ni and Ge on the Ti intermediate layer, forming a second Ni/Ge layer, and performing a rapid thermal anneal (RTA) process.
Claims20
A method comprising:
- co-sputtering nickel (Ni) and germanium (Ge), forming a first Ni/Ge layer on a Ge or silicon germanium (SiGe) active layer;
- depositing titanium (Ti) on the first Ni/Ge layer, forming a Ti intermediate layer;
- co-sputtering Ni and Ge on the Ti intermediate layer, forming a second Ni/Ge layer;
- and
- performing a rapid thermal anneal (RTA) process.
2 more elements
A device, comprising:
- an active layer comprising Si1-xGex, wherein 0.5<x≦1;
- a first NiGe or NiGeSi layer formed on the active layer;
- a NiTiGe or NiTiGeSi alloy layer formed on the first NiGe or NiGeSi layer, respectively, and
- a second NiGe layer on the NiTiGe or NiTiGeSi alloy layer, respectively.
1 more element
A method comprising:
- co-sputtering nickel (Ni) and germanium (Ge), forming a first Ni/Ge layer, having a thickness of 1 nm to 10 nm, on a Ge or silicon germanium (SiGe) active layer;
- depositing titanium (Ti) on the first Ni/Ge layer, forming a Ti intermediate layer, having a thickness of 1 nm to 10 nm;
- co-sputtering Ni and Ge on the Ti intermediate layer, forming a second Ni/Ge layer, having a thickness of 1 nm to 20 nm;
- and
- performing a rapid thermal anneal (RTA) process at a temperature of 200° C. to 400° C. for a time period of 30 seconds.
2 more elements
Dependencies are inferred from the claim text.