Semiconductor device including a deep contact and a method of manufacturing such a device

Abstract

A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of manufacturing a semiconductor device and a deep contact for providing a low resistive connection to the buried layer, with the steps of forming a buried layer, providing an active region adjacent the buried layer and forming a deep contact for providing a low resistive connection to the buried layer by patterning a contact shape for the deep contact on an upper surface of the active region, removing part of the active region underneath the contact shape to create a deep contact cavity. Subsequently a polycrystalline silicon layer for filling the deep contact cavity is deposited and doped.

Dependencies are inferred from the claim text.