Stratified gate dielectric stack for gate dielectric leakage reduction

A method of forming a semiconductor structure including a field effect transistor (FET), said method comprising:

• forming a first high dielectric constant (high-k) gate dielectric layer comprising a first high-k dielectric material and located on a semiconductor substrate;
• forming a band-gap-disrupting dielectric layer comprising a dielectric material having a different band gap than said first high-k gate dielectric on said first high-k gate dielectric layer;
• forming a second high-k gate dielectric layer comprising a second high-k dielectric material having a different band gap than said band-gap-disrupting dielectric of said band-gap-disrupting dielectric layer;
• and
• patterning a stack of said first high-k gate dielectric layer, said band-gap-disrupting dielectric layer, and said second high-k gate dielectric layer to form a stratified gate dielectric stack of a first high-k gate dielectric, a band-gap-disrupting dielectric, and a second high-k gate dielectric, wherein a first atomic interface between said band-gap-disrupting dielectric and said first high-k gate dielectric is spaced from a second atomic interface between said band-gap-disrupting dielectric and said second high-k gate dielectric by at least one continuous atomic layer of said dielectric material of said band-gap-disrupting dielectric within said stratified gate dielectric stack.