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US 2013/0280897 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorNaoyoshi Tamura
Life of this patent
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Abstract
A semiconductor device includes a MOS transistor, a source electrode and a drain electrode on the MOS transistor each include a first carbon doped silicon layer including carbon at a first carbon concentration and phosphorus at a first phosphorus concentration and a second carbon doped silicon layer over the first silicon carbide layer, which includes phosphorus at a second phosphorus concentration higher than the first phosphorus concentration, and which includes carbon at a second carbon concentration less than or equal to the first carbon concentration.
Claims5
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film and a gate electrode over a semiconductor substrate;
- ion-implanting carbon into the semiconductor substrate in a first dosage with first acceleration energy using the gate electrode as a mask;
- ion-implanting phosphorus into the semiconductor substrate in a second dosage with second acceleration energy using the gate electrode as a mask;
- forming side wall spacers on both side surfaces of the gate electrode;
- ion-implanting carbon into the semiconductor substrate in a third dosage larger than the first dosage with third acceleration energy using the gate electrode and the side wall spacers as masks;
- and
- ion-implanting phosphorus into the semiconductor substrate in a fourth dosage smaller than the second dosage with fourth acceleration energy using the gate electrode and the side wall spacers as masks.
4 more elements
Dependencies are inferred from the claim text.