Method for production of selective growth masks using imprint lithography
AssigneeNanocrystal Asia Inc.
InventorsChong-Ming LEE, Andrew Eng-Jia Lee
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Abstract
The present invention discloses a method for production of selective growth masks using imprint lithography. The method includes steps of: providing a sapphire substrate, forming a GaN layer, an insulation layer, and a photo-resistive layer, performing imprint lithography, performing exposure and development, performing dry etching, and removing the remained photo-resistive layer. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the GaN layer, and each nanowire is parallel to one another.
Claims10
A method for production of selective growth masks using imprint lithography, comprising steps of:
- providing a sapphire substrate, wherein the sapphire substrate is a base for forming material layers;
- forming a GaN layer, an insulation layer, and a photo-resistive layer, wherein the GaN layer is formed on the sapphire substrate, the insulation layer is formed on the GaN layer, and the photo-resistive layer is formed on the insulation layer;
- performing imprint lithography, wherein the photo-resistive layer is imprinted with a pattern of plural holes so as to transfer the pattern of said holes on the surface of the photo-resistive layer;
- performing exposure and development, wherein the imprinted photo-resistive layer is illuminated by a light source to form corresponding holes in the photo-resistive layer so as to expose the insulation layer through said holes of the photo-resistive layer;
- performing dry etching, wherein the insulation layer under said holes of the photo-resistive layer is removed by dry etching and the GaN layer is exposed through said holes of the photo-resistive layer;
- and
- removing the remained photo-resistive layer.
Dependencies are inferred from the claim text.