Method for Producing a Conductor Line

A method for producing a conductor line of a semiconductor component, the method comprising:

• providing a partially completed semiconductor component with a bottom side and a top side spaced distant from the bottom side in a vertical direction;
• arranging a dielectric layer on the top side, the dielectric layer being doped with a dopant having, in the vertical direction, a nonconstant course of concentration;
• forming a trench in the dielectric layer such that the trench intersects regions of the dielectric layer, the regions having different dopant concentrations;
• widening the trench by etching the trench at different etch rates caused by the different dopant concentrations;
• forming a conductor line by filling the widened trench with an electrically conductive material.

A method for producing a conductor line of a semiconductor component, the method comprising:

• providing a partially completed semiconductor component with a bottom side and a top side spaced distant from the bottom side in a vertical direction;
• providing an etchant;
• arranging a dielectric layer that is doped with a dopant on the top side by subsequently depositing a number of at least two sub-layers, wherein in any two adjacent ones of the at least two sub-layers a concentration of the dopant is
• (a) different;
• or
• (b) zero in one of the two adjacent ones of the at least two sub-layers and greater than zero in the other one of the two adjacent ones of the at least two sub-layers;
• forming a trench in the dielectric layer such that the trench intersects each of the at least two sub-layers;
• widening the trench by etching the trench at different etch rates caused by different concentrations of the dopant;
• forming a conductor line by filling the widened trench with an electrically conductive material.