Techniques for FinFET Doping
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Chien-Tai Chan, Mao-Rong Yeh, Da-Wen Lin
Life of this patent
Estimating the term…
Abstract
A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.
Claims10
A method of forming an integrated circuit, the method comprising:
- providing a semiconductor wafer comprising a semiconductor fin dispatched on a surface of the semiconductor wafer;
- and
- forming a fin field-effect transistor (FinFET) comprising:
- forming a dopant-rich layer comprising an impurity on a top surface and sidewalls of the semiconductor fin using a plasma ion assisted deposition, wherein the impurity is an n-type impurity or a p-type impurity;
- and
- driving the impurity in the dopant-rich layer into the semiconductor fin to form a lightly-doped source/drain (LDD) region.
A method of forming an integrated circuit, the method comprising:
- providing a semiconductor wafer comprising a first semiconductor fin and a second semiconductor fin;
- forming a photo resist to cover the second semiconductor fin, with the first semiconductor fin not covered;
- forming a dopant-rich layer comprising an impurity on a top surface and sidewalls of the first semiconductor fin using a plasma ion assisted deposition;
- performing a knock-on implantation to drive the impurity in the dopant-rich layer into the semiconductor fin to form a lightly-doped source/drain region of a fin field-effect transistor (FinFET);
- after the step of performing the knock-on implantation, removing the dopant-rich layer;
- and
- removing the photo resist.
Dependencies are inferred from the claim text.