Enhanced device reliability of a semiconductor device by providing superior process conditions in high-k film growth

A method, comprising:

• forming an oxide-based dielectric layer on an active region of a transistor of a semiconductor device;
• preparing a surface of said oxide-based dielectric layer for a subsequent deposition of a hafnium oxide-based high-k dielectric material by performing a wet chemical treatment so as to increase a number of OH groups at said surface;
• forming said hafnium oxide-based high-k dielectric material by a cyclic deposition process;
• and
• forming a gate electrode structure of said transistor by forming at least one electrode material above said hafnium oxide-based high-k dielectric material.

A method of forming a gate dielectric material of a transistor, the method comprising:

• forming an oxide-based dielectric material on an active region of said transistor;
• preparing a surface of said oxide-based dielectric material by applying a wet chemical process based on ammonium hydroxide and hydrogen peroxide;
• and
• forming a hafnium oxide layer on said prepared surface while suppressing incorporation of non-hafnium species and non-oxygen species.