Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Woo Hyun, Sun-Ghil Lee
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- implanting ions into a semiconductor substrate in a pre-halo ion implantation process;
- epitaxially growing a layer of material on the entirety of an upper surface of the semiconductor substrate to thereby form a first epitaxial layer;
- epitaxially growing a layer of material on the entirety of an upper surface of the first epitaxial layer to thereby form a second epitaxial layer;
- and
- forming a transistor on an active region defined in the second epitaxial layer,
- wherein the first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo ion implantation process from diffusing into the second epitaxial layer.
A method of fabricating a semiconductor device, the method comprising:
- implanting ions into a semiconductor substrate in a pre-halo ion implantation process;
- sequentially forming a first epitaxial layer and a second epitaxial layer on the semiconductor substrate by epitaxial growth processes;
- after the second epitaxial layer has been formed, forming an isolation film in the second epitaxial layer to define at least one active region;
- and
- forming at least one transistor at the at least one active region,
- wherein the first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo ion implantation process from diffusing into the second epitaxial layer.
A method of fabricating a semiconductor device, the method comprising:
- implanting ions into a semiconductor substrate in a pre-halo ion implantation process;
- epitaxially growing a first layer of material on an upper surface of the semiconductor substrate, and a second layer of material on the first layer, wherein the second layer is formed after the pre-halo ion implantation process has been carried out, and the composition of the second layer is substantially different from that of the first layer;
- and
- forming a respective transistor on each of at least one active region defined in the epitaxially grown second layer including by forming a source/drain of the transistor using a halo ion implantation process, and forming a gate structure over part of the second epitaxially grown second layer constituting a channel region of the transistor,
- wherein the epitaxially grown first layer prevents the ions implanted in the semiconductor substrate in the pre-halo ion implantation process from diffusing into the part of the second epitaxial layer constituting the channel region at least from the time that the second layer has been formed to the time the transistor has formed.
Dependencies are inferred from the claim text.