Image Sensor Isolation Region and Method of Forming the Same

A method comprising:

• etching a recess in a semiconductor substrate;
• forming an epitaxial layer on a sidewall of the recess and on a bottom surface of the recess;
• forming a dielectric material in a remaining portion of the recess;
• and
• forming a photo element in the semiconductor substrate proximate the recess, the photo element comprising a p-n junction.

A method comprising:

• forming a p-well through a first side of a substrate and in the substrate;
• forming a recess in the p-well in the substrate;
• epitaxially growing a regrowth layer in the recess;
• forming an insulating material in a remaining portion of the recess and on the regrowth layer;
• forming a photo diode in the substrate and proximate the p-well;
• forming a plurality of inter-metal dielectric layers on the first side of the substrate;
• and
• forming a lens on at least one of (i) at least one of the plurality of inter-metal dielectric layers and (ii) a second side of the substrate, the second side being opposite the first side.