Light emitting device and method of manufacturing the same

A method for manufacturing a light emitting device, comprising the steps of:

• forming an insulating film over a substrate;
• forming a first electrode over the insulating film;
• forming a bank including an organic resin material, the bank covering an edge of the first electrode;
• forming a first organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank;
• forming a second organic compound layer over the first organic compound layer, the second organic compound layer comprises a light emitting layer;
• and
• forming a second electrode over the second organic compound layer,
• wherein a thickness of the first organic compound layer at an edge part, at which the first electrode and the bank are in contact with each other, is larger than the first thickness and the second thickness.

A method for manufacturing a light emitting device, comprising the steps of:

• forming a thin film transistor over a substrate;
• forming an insulating film over the thin film transistor;
• forming a first electrode over the insulating film;
• forming a bank including an organic resin material, the bank covering an edge of the first electrode;
• forming a first organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank;
• forming a second organic compound layer over the first organic compound layer, the second organic compound layer comprises a light emitting layer;
• and
• forming a second electrode over the second organic compound layer,
• wherein a thickness of the first organic compound layer at an edge part, at which the first electrode and the bank are in contact with each other, is larger than the first thickness and the second thickness.

A method for manufacturing a light emitting device, comprising the steps of:

• forming a thin film transistor over a substrate;
• forming a first insulating film including an organic resin material over the thin film transistor;
• forming a second insulating film over the first insulating film;
• forming a first electrode over the second insulating film;
• forming a bank including an organic resin material, the bank covering an edge of the first electrode;
• forming a first organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank;
• forming a second organic compound layer over the first organic compound layer, the second organic compound layer comprises a light emitting layer;
• and
• forming a second electrode over the second organic compound layer,
• wherein a thickness of the first organic compound layer at an edge part, at which the first electrode and the bank are in contact with each other, is larger than the first thickness and the second thickness.