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US 2013/0280832 A1Published application
Fabrcation method of light-emitting device
AssigneeEpistar Corporation
InventorsSheng-Horng YEN, Yung-Hsiang Lin, Ying-Yong Su, Han-Min Wu
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Abstract
A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.
Claims20
A fabrication method of a light-emitting device, comprising:
- providing a growth substrate;
- forming a protective layer on a first surface of the growth substrate;
- and
- forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.
1 more element
A fabrication method of a light-emitting device, comprising:
- providing a growth substrate comprising a first region and a second region opposite to the first region, wherein the first region comprises a first material and the second region comprises a second material, wherein the coefficient of thermal expansion of the first material is larger than that of the second material;
- forming a first semiconductor layer on the second region of the growth substrate, wherein the coefficient of thermal expansion of the first semiconductor layer is larger than that of the second material of the growth substrate;
- forming a buffer layer between the growth substrate and the first semiconductor layer;
- forming a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer to form a semiconductor stack;
- forming a bonding layer on the semiconductor stack;
- forming a support substrate on the bonding layer;
- and
- removing the growth substrate from the semiconductor stack.
5 more elements
Dependencies are inferred from the claim text.