Apparatus for Monitoring Ion Implantation

A method comprising:

• placing a wafer on a wafer holder;
• moving a first sensor and a second sensor with the wafer holder;
• coupling a first current meter and a second current meter to the first sensor and the second sensor respectively;
• and
• receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively.

A method comprising:

• generating a uniform ion implantation current profile from an ion beam;
• placing a first sensor within an effective range of the uniform ion implantation current profile;
• and
• estimating a first ion dose based upon a first detected signal from the first sensor.