Photoresist composition and resist pattern-forming method
AssigneeJsr Corporation
InventorsKazuki KASAHARA, Norihiko IKEDA
Life of this patent
Estimating the term…
Loading patent…
AssigneeJsr Corporation
InventorsKazuki KASAHARA, Norihiko IKEDA
Estimating the term…
A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R1 is hydrogen atom, fluorine atom, etc., R2 and R3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R4 and R5 independently hydrogen atom, fluorine atom, etc., R6 is hydrogen atom, fluorine atom, etc., R7 and R8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R9 is alkyl group having 1 to 4 carbon atoms, etc., R10 is hydrogen atom, etc., A− is —N−—SO2—Ra, etc., and X+ is onium cation.
A photoresist composition comprising:
Dependencies are inferred from the claim text.