Mask and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Yue Lin, Ta-Cheng Lien, Hsin-Chang Lee, Anthony Yen, Chia-Jen Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Yue Lin, Ta-Cheng Lien, Hsin-Chang Lee, Anthony Yen, Chia-Jen Chen
Estimating the term…
A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
A photomask comprising:
A method of preparing a photomask, comprising:
A photomask for suppressing haze growth, the photomask comprising:
Dependencies are inferred from the claim text.