Capacitorless dram on bulk silicon
AssigneeMicron Technology, Inc.
InventorsSuraj Mathew, Jigish D. Trivedi
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Abstract
A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon substrate. An insulator layer is defined atop at least a portion of the silicon substrate, and between the silicon studs. A silicon-over-insulator layer is defined surrounding the silicon studs atop the insulator layer, and a capacitorless DRAM is formed within and above the silicon-over-insulator layer.
Claims20
A method of operating a capacitorless DRAM, the method comprising:
- placing a floating body in a first state;
- and
- detecting the first state by measuring a first current at a source of the capacitorless DRAM;
- wherein the floating body is defined within a localized silicon-over-insulator.
A method of operating a capacitorless DRAM, the method comprising:
- placing a first floating body and a second floating body in a first state;
- and
- detecting the first state by measuring a parameter at a source of the capacitorless DRAM;
- wherein the first and second floating bodies are defined within a single localized silicon-over-insulator.
A method of operating a capacitorless DRAM, the method comprising:
- performing at least one of read and write operations on at least one of a first floating body and a second floating body;
- wherein the first floating body and the second floating bodies are defined within a localized silicon-over-insulator positioned over an insulator layer, with a silicon pillar extending from a silicon substrate to the silicon-over insulator through the insulator layer.
Dependencies are inferred from the claim text.