Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChiWeon YOON, Donghyuk CHAE, Sang-Wan NAM, Sung-Won YUN
Life of this patent
Estimating the term…
Abstract
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
Claims10
-7. (canceled)
A program method of a non-volatile memory device which includes groups of memory cells sequentially provided in a direction vertical to a substrate and in which at least two strings are connected to one bit line, the program method comprising:
- performing a bit line setup operation together with a channel boosting operation;
- and
- performing a program execution operation by applying a program voltage to a selected word line.
-20. (canceled)
Dependencies are inferred from the claim text.