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US 2013/0279259 A1Published application
Hafnium tantalum oxynitride dielectric
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Kie Y. Ahn, Arup Bhattacharyya
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Abstract
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.
Claims12
A method comprising:
- transmitting a voltage to an electrode, the electrode electrically coupled to an insulator and further electrically coupled to a conductive region, the conductive region forming at least a part of a conductive path, the insulator comprising at least one of a transition metal and a refractory metal;
- and
- storing a charge based on the voltage.
A method comprising:
- receiving a signal using a circuit device including a dielectric portion located between two or more conductive regions, the dielectric comprising a transition metal and a refractory metal;
- and
- coupling the signal to provide an electric field, the electric field strength based on the dielectric portion.
Dependencies are inferred from the claim text.