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US 2013/0279102 A1Published application
Etchstop layers and capacitors
AssigneeIntel Corporation
InventorRuth A. Brain
Life of this patent
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Abstract
Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense etchstop layer is, for example, a high-k material. Capacitors are, for example, metal-insulator-metal (MIM) capacitors and are useful in DRAM (dynamic random access memory) and eDRAM (embedded dynamic random access memory) structures.
Claims24
A semiconductor device comprising,
- a substrate having at least one dielectric layer disposed on the substrate surface.
- the dielectric layer having a first dielectric etchstop layer and a second etchstop layer disposed thereon, wherein the second etchstop layer has a density that is greater than the first etchstop layer and a density that is greater than 3 g/cm3,
- a well formed through the first and second etchstop layers and in the at least one dielectric layer, wherein the well comprises sidewalls and a bottom, and a first layer of conducting material is disposed on the sidewalls and bottom of the well, an insulating layer disposed on the first layer of conducting material, and a second layer of conducting material disposed on the first layer of conducting material.
A semiconductor device comprising,
- a substrate having at least one dielectric layer on the substrate surface,
- the dielectric layer having a first dielectric etchstop layer and a second etchstop layer disposed thereon, wherein the second etchstop layer is comprised of a high-k material, and
- a well formed through the first and second etchstop layers and in the at least one dielectric layer, wherein the well comprises sidewalls and a bottom, and a first layer of conducting material is disposed on the sidewalls and bottom of the well, an insulating layer disposed on the first layer of conducting material, and a second layer of conducting material disposed on the first layer of conducting material.
A computing device comprising:
- a motherboard,
- a communication chip mounted on the motherboard;
- and
- a processor mounted on the motherboard, the processor comprising:
- a substrate having at least one dielectric layer disposed on the substrate surface,
- the dielectric layer having a first dielectric etchstop layer and a second etchstop layer disposed thereon, wherein the second etchstop layer has a density that is greater than the first etchstop layer and that is greater than 3 g/cm3,
- a well formed through the first and second etchstop layers and in the at least one dielectric layer, wherein the well comprises sidewalls and a bottom, and a first layer of conducting material is disposed on the sidewalls and bottom of the well, an insulating layer disposed on the first layer of conducting material, and a second layer of conducting material disposed on the first layer of conducting material.
4 more elements
Dependencies are inferred from the claim text.