Solid-state imaging device and electronic equipment

A backside illumination type solid-state imaging device, comprising:

• stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer;
• a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit;
• and
• a second shield wire which shields the connection wire and a first wire and a second wire which are connected to another connection wire adjacent thereto,
• wherein the connection wire includes a connection conductor which is connected to a first connection pad connected to a necessary first wire in the first multi-layered wiring layer, a penetrating connection conductor which penetrates the first semiconductor chip unit and is connected to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer, and a coupling conductor which couples the connection conductor and the penetrating connection conductor, and
• wherein the second shield wire is formed with a wiring in a necessary layer in the first multi-layered wiring layer and the second multi-layered wiring layer.

Electronic equipment comprising:

• a solid-state imaging device;
• an optical system which guides incident light to a photodiode of the solid-state imaging device;
• and
• a signal processing circuit which processes output signals of the solid-state imaging device,
• the solid-state imaging device including stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer;
• a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit;
• and a first shield wire which shields adjacent connection wires in one direction therebetween, in which the connection wire includes a connection conductor which is connected to a first connection pad connected to a necessary first wire in the first multi-layered wiring layer, a penetrating connection conductor which penetrates the first semiconductor chip unit and is connected to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer, and a coupling conductor which couples the connection conductor and the penetrating connection conductor, and the first shield wire is formed with a wiring in a necessary layer in the first multi-layered wiring layer and/or the second multi-layered wiring layer.

Electronic equipment comprising:

• a solid-state imaging device;
• an optical system which guides incident light to a photodiode of the solid-state imaging device;
• and
• a signal processing circuit which processes output signals of the solid-state imaging device,
• the solid-state imaging device including stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer;
• a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit;
• and a second shield wire which shields the connection wire and a first wire and a second wire which are connected to another connection wire adjacent thereto, in which the connection wire includes a connection conductor which is connected to a first connection pad connected to a necessary first wire in the first multi-layered wiring layer, a penetrating connection conductor which penetrates the first semiconductor chip unit and is connected to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer, and a coupling conductor which couples the connection conductor and the penetrating connection conductor, and the second shield wire is formed with a wiring in a necessary layer in the first multi-layered wiring layer and the second multi-layered wiring layer.