Mosfet switch gate drive, mosfet switch system and method

A high-side MOSFET switch system comprising:

• a MOSFET connected to provide power from a direct current power supply to a capacitive load;
• and
• a gate drive circuit to provide a pulsed gate voltage to a gate of the MOSFET, the pulsed gate voltage having a first voltage for a first time period and a second voltage for a second time period, the first voltage being less than a turn-on threshold gate-source voltage of the MOSFET and the second voltage being greater than the turn-on threshold gate-source voltage,
• wherein the second time period is less than a time period for a gate-source voltage of the MOSFET to exceed a second threshold voltage at which a Miller capacitance of the MOSFET is charged.

A method of pulse-driven switching of a MOSFET, the method comprising:

• applying a first voltage for a first period of time to a gate of the MOSFET, the first voltage being less than a turn-on threshold voltage of the MOSFET;
• and
• applying a second voltage for a second period of time to the MOSFET gate, the second voltage being greater than the MOSFET turn-on threshold voltage, the second period of time being less than a time period for a gate-source voltage of the MOSFET to exceed a Miller capacitance threshold,
• wherein applying the first voltage alternates with applying the second voltage to provide pulse-driven switching of the MOSFET, the pulse-driven switching controlling an inrush current provided to a capacitive load by the MOSFET.