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US 2013/0278281 A1Published application
Semiconductor device including body connected fets
AssigneeInternational Business Machines Corporation
InventorsMyung-Hee Na, Edward J. Nowak
Life of this patent
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Abstract
A semiconductor includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.
Claims12
A method of testing a field-effect transistor (FET), the method comprising:
- providing a first field-effect transistor (FET) and a second FET, wherein the first FET and the second FET include similar polarities, and wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to the source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET;
- measuring a first drain current in a drain of the first FET;
- measuring a second drain current in the drain of the first FET;
- determining an effective current for the first FET based on an average of the first drain current and the second drain current.
1 more element
Dependencies are inferred from the claim text.