Semiconductor Structure And Method For Manufacturing The Same

A semiconductor structure comprising a substrate (100), source/drain regions (110), a gate stack and an interfacial layer, wherein

• the substrate (100) has a channel region;
• the source/drain regions (110) are formed in the substrate (100) and located on both sides of the channel region;
• the gate stack comprises a high-k dielectric layer (210) and a gate on the high-k dielectric layer;
• the high-k dielectric layer (210) is located on the channel region;
• and wherein the gate comprises first oxygen absorbing layers (250) and a second oxygen absorbing layer (260);
• the first oxygen absorbing layers (250) are formed to surround sidewalls of the second oxygen absorbing layer (260);
• and the oxygen absorbing capacity of the first oxygen absorbing layer (250) is less than that of the second oxygen absorbing layer (260);
• and
• the interfacial layer is located under the high-k dielectric layer (210) and consists of first interfacial layers (120) and a second interfacial layer (130);
• the first interfacial layers (120) are located near the source and the drain of the source/drain regions (110), respectively;
• the second interfacial layer (130) is located between the first interfacial layers (120), and the thickness of the first interfacial layers (120) is greater than that of the second interfacial layer (130).