Dummy FinFET Structure and Method of Making Same

A semiconductor device comprising:

• an active FinFET over a substrate, wherein the active FinFET comprises one or more active semiconductor fins, the active FinFET having four sides;
• a first dummy FinFET over the substrate, wherein the first dummy FinFET comprises one or more dummy semiconductor fins, the first dummy FinFET laterally adjacent a first side of the active FinFET;
• a second dummy FinFET over the substrate, wherein the second dummy FinFET comprises one or more dummy semiconductor fins, the second dummy FinFET laterally adjacent a second side of the active FinFET;
• a third dummy FinFET over the substrate, wherein the third dummy FinFET comprises one or more dummy semiconductor fins, the third dummy FinFET laterally adjacent a third side of the active FinFET;
• and
• a fourth dummy FinFET over the substrate, wherein the fourth dummy FinFET comprises one or more dummy semiconductor fins, the fourth dummy FinFET laterally adjacent a fourth side of the active FinFET.