Bicmos devices on etsoi
AssigneeInternational Business Machines Corporation
InventorsWilliam F. Clark, JR., Qizhi Liu, Robert Mark Rassel, Yun Shi
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Abstract
A BiCMOS device structure, method of manufacturing the same and design structure thereof are provided. The BiCMOS device structure includes a substrate having a layer of semiconductor material upon an insulating layer. The BiCMOS device structure further includes a bipolar junction transistor structure formed in a first region of the substrate having an extrinsic base layer formed at least partially from a portion of the layer of semiconductor material.
Claims20
A semiconductor device structure comprising:
- a substrate having a layer of semiconductor material upon an insulating layer;
- and
- a bipolar junction transistor structure formed in a first region of the substrate having an extrinsic base layer formed at least partially from a portion of the layer of semiconductor material.
A method of forming a semiconductor device structure comprising:
- providing a substrate having a layer of semiconductor material that is present on an insulating layer;
- and
- forming a bipolar junction transistor structure in a first region of the substrate, wherein forming the bipolar junction transistor structure comprises forming an extrinsic base layer at least partially from a portion of the layer of semiconductor material.
A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
- a substrate having a layer of semiconductor material upon an insulating layer;
- and
- a bipolar junction transistor structure formed in a first region of the substrate having an extrinsic base layer formed at least partially from a portion of the layer of semiconductor material.
Dependencies are inferred from the claim text.