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AssigneeAlpha and Omega Semiconductor Incorporated
InventorsLingpeng Guan, Anup Bhalla, Tinggang Zhu, Madhur Bobde
Estimating the term…
A superjunction device and methods for layout design and fabrication of a superjunction device are disclosed. A layout of active cell column structures can be configured so that a charge due to first conductivity type dopants balances out charge due to second conductivity type dopants in a doped layer in an active cell region. A layout of end portions of the active cell column structures proximate termination column structures can be configured so that a charge due to the first conductivity type dopants in the end portions and a charge due to the first conductivity type dopants in the termination column structures balances out charge due to the second conductivity type dopants in a portion of the doped layer between the termination column structures and the end portions.
A termination structure for a semiconductor device, comprising:
The termination structure of the claim 23 wherein a metal portion of the channel stop field plate contacts a lowly doped portion of the semiconductor material.
The termination structure of claim 23 wherein the termination structure is formed on a die containing a semiconductor device, wherein the semiconductor device is a MOSFET.
The termination structure of claim 23 wherein the termination structure is formed on a die containing a semiconductor device, wherein the semiconductor device is a superjunction device.
Dependencies are inferred from the claim text.