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US 2013/0277724 A1Published application
Capacitors and semiconductor devices including the same
AssigneeSamsung Electronics Co., Ltd.
InventorJong-Ryul JUN
Life of this patent
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Abstract
A capacitor includes a lower electrode having a curved surface, a first seed on a sidewall of the lower electrode, which the first seed includes a metal silicide and has a shape corresponding to the curved surface of the lower electrode, a dielectric layer on the lower electrode, the dielectric layer covering the first seed, and an upper electrode on the dielectric layer.
Claims13
A capacitor, comprising:
- a lower electrode having a curved surface;
- a first seed on a sidewall of the lower electrode, the first seed including a metal silicide and having a shape corresponding to the curved surface of the lower electrode;
- a dielectric layer on the lower electrode, the dielectric layer covering the first seed;
- and
- an upper electrode on the dielectric layer.
2 more elements
8-15. (canceled)
A capacitor, comprising:
- a lower electrode, a bottom surface and a sidewall of the lower electrode having a plurality of protrusions thereon;
- first seeds adjacent to the sidewall of the lower electrode and second seeds adjacent to the bottom surface of the lower electrode, the first and second seeds having a shape corresponding to the protrusions;
- a dielectric layer on the lower electrode, the dielectric layer covering the second seeds;
- and
- an upper electrode on the lower electrode.
2 more elements
Dependencies are inferred from the claim text.