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US 2013/0277722 A1Published application
Spin field effect logic devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-ha HONG, Jong-seob KIM, Jai-kwang SHIN
Life of this patent
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Abstract
Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.
Claims8
-8. (canceled)
A spin field effect logic device comprising:
- a channel including a magnetic material configured to selectively transmit spin-polarized electrons;
- a source on the channel;
- a gate electrode on the channel;
- a drain electrode configured to output electrons transmitted from the source;
- an output electrode configured to output electrons transmitted from the source;
- a first voltage source connected to the drain;
- a second channel on the channel, the drain on the second channel;
- and
- a second gate electrode on the second channel,
- wherein the source is on the channel,
- the output electrode is connected between the drain and the first voltage source,
- the source and the drain are magnetized in a first direction,
- the gate and the second gate electrodes are configured to control a magnetization state of the channel and the second channel respectively, in order to selectively transmit electrons injected from the source into the channel, and
- the channel and the second channel transmit the spin-polarized electrons which are magnetized in a second direction.
11 more elements
-24. (canceled)
Dependencies are inferred from the claim text.